AO4498E 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 18a r ds(on) (at v gs =10v) < 5.8m w r ds(on) (at v gs = 4.5v) < 8.5m w esd protected 100% uis tested 100% rg tested symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 2 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics units parameter typ max c/w r q ja 31 59 40 v 20 gate-source voltage drain-source voltage 30 the AO4498E combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v a i d 18 14 120 t a =25c t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c w 3.1 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 maximum junction-to-ambient a g ds soic-8 top view bottom view d d d d s s s g rev 1: november 2009 www.aosmd.com page 1 of 5
AO4498E symbol min typ max units bv dss 30 36 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1.3 1.8 2.3 v i d(on) 120 a 4.8 5.8 t j =125c 7.4 8.9 6.8 8.5 m w g fs 50 s v sd 0.7 1 v i s 4 a c iss 1840 2300 2760 pf c oss 230 330 430 pf c rss 145 240 340 pf r g 0.6 1.25 1.9 w q g (10v) 34 42 50 nc q g (4.5v) 16 20 24 nc q gs 5.6 7 8.4 nc q gd 6 10 14 nc t d(on) 8 ns t r 10 ns t d(off) 33 ns t f 8 ns t rr 10 12.5 15 ns q rr 22 27 32 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =18a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.83 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =18a gate source charge gate drain charge total gate charge m w i s =1a,v gs =0v v ds =5v, i d =18a v gs =4.5v, i d =16a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =18a reverse transfer capacitance i f =18a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 1: november 2010 www.aosmd.com page 2 of 5
AO4498E typical electrical and thermal characteristics 17 52 10 0 18 40 0 20 40 60 80 100 0 1 2 3 4 5 6 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =16a v gs =10v i d =18a 0 5 10 15 20 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =18a 25c 125c 0 20 40 60 80 100 120 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 3.5v 6v 10v 4v 4.5v rev 1: november 2010 www.aosmd.com page 3 of 5
AO4498E typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =18a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d single pulse rev 1: november 2010 www.aosmd.com page 4 of 5
AO4498E - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d iode r ecovery t est c ircuit & w aveform s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff rev 1: november 2010 www.aosmd.com page 5 of 5
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